THERMAL AND PULSED LASER EVAPORATION OF SINGLE PHASE AS_XP_1-X ALLOYSSCHWARTZ GP; BONDYBEY VE; ENGLISH JH et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 11; PP. 952-954; BIBL. 13 REF.Article

The effect of interstitial Frank partial dislocations on the gradual degradation of 1.3-μm double-channel planar buried heterostructure laser diodesDE COOMAN, B. C; BULLE-LIEUWMA, C. W. T; DE POORTER, J. A et al.Journal of applied physics. 1990, Vol 67, Num 9, pp 3919-3926, issn 0021-8979, 1Article

Effects of PAs_xN_y deposition conditions and the Cd concentration in the substrates on the characteristics of In_0.53Ga_0.47As metal-insulator-semiconductor field effect transistorsIWASE, Y; KAWAHARA, A; ARAI, F et al.Japanese journal of applied physics. 1988, Vol 27, Num 12, pp L2420-L2423, issn 0021-4922, 2Article

Structural perfection of four-layer GaxIn1-xAsyP1-y laser heterostructuresKRASILNIKOV, V. S.Inorganic materials. 2003, Vol 39, Num 12, pp 1233-1238, issn 0020-1685, 6 p.Article

Structure of As-Se and As-P-Se glasses studied by Raman spectroscopyKOVANDA, V; VLCEK, Mir; JAIN, H et al.Journal of non-crystalline solids. 2003, Vol 326-27, Num 1, pp 88-92, issn 0022-3093, 5 p.Conference Paper

Study on the reliability of an InP/InGaAsP integrated laser modulatorHORNUNG, V; LE DU, F; STARCK, C et al.Microelectronics and reliability. 1996, Vol 36, Num 11-12, pp 1919-1922, issn 0026-2714Conference Paper

InGaAsP/InGaAs tandem cells for a solar cell configuration with more than three junctions : Focus on photovoltaics - new frontiersSZABO, N; SAGOL, B. E; SEIDEL, U et al.Physica status solidi. Rapid research letters (Print). 2008, Vol 2, Num 6, pp 254-256, issn 1862-6254, 3 p.Article

Effects of the linewidth enhancement factor on filamentation in 1.55 μm broad-area laser diodesDU CHANG HEO; IL KI HAN; JUNG IL LEE et al.Semiconductor science and technology. 2003, Vol 18, Num 6, pp 486-490, issn 0268-1242, 5 p.Article

Improved performance of 1.3 μm InGaAsP-InP lasers with an AlInAs electron stopper layerJINYAN JIN; TIAN, Decheng.Semiconductor science and technology. 2003, Vol 18, Num 11, pp 960-963, issn 0268-1242, 4 p.Article

Coupling of large optical loss with Auger recombination in 1.3 μm InGaAsP lasers investigated using hydrostatic pressureJIN, S. R; SWEENEY, S. J; ADAMS, A. R et al.Physica status solidi. B. Basic research. 2003, Vol 235, Num 2, pp 547-551, issn 0370-1972, 5 p.Conference Paper

Measurements of line strengths in the HO₂ υ₁ overtone band at 1.5 μm using an InGaAsP laserJOHNSON, T. J; WIENHOLD, F. G; BURROWS, J. P et al.Journal of physical chemistry (1952). 1991, Vol 95, Num 17, pp 6499-6502, issn 0022-3654Article

Numerical simulation of the limiting efficiency of the graded bandgap solar cellRAFAT, N. H; ABDEL HALEEM, A. M; HABIB, S. E.-D et al.Renewable energy. 2007, Vol 32, Num 1, pp 21-34, issn 0960-1481, 14 p.Article

p-n junction heterostructure device physics model of a four junction solar cellGRIGGS, Melissa J; KAYES, Brendan M; ATWATER, Harry A et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, pp 63390D.1-63390D.8, issn 0277-786X, isbn 0-8194-6418-X, 1VolConference Paper

Progress in chemical beam epitaxyTSANG, W. T.Journal of crystal growth. 1990, Vol 105, Num 1-4, pp 1-29, issn 0022-0248Conference Paper

Influence of Si₃N₄ and ZnS films on transmittance of InAsSb/InAsPSb heterostructuresGAO, Y. Z; GONG, X. Y; FANG, W. Z et al.Applied surface science. 2005, Vol 244, Num 1-4, pp 297-300, issn 0169-4332, 4 p.Conference Paper

Optical studies of the Holmium-doped InGaAsP epilayersLEE, Y. C; SHU, G. W; CHENG, I. M et al.Physica status solidi. A. Applied research. 2003, Vol 200, Num 2, pp 439-445, issn 0031-8965, 7 p.Article

Anodic oxidation of In_xGa_1-xAs_yP_1-y epitaxial layersSMEKALIN, K; ZHANG, G; LAMMASNIEMI, J et al.Journal of the Electrochemical Society. 1994, Vol 141, Num 8, pp L97-L98, issn 0013-4651Article

Liquid-phase electroepitaxial growth of low band-gap p-InasPSb/n-InAs and p-InAsP/n-InAs diode heterostructures for thermo-photovoltaic applicationGEVORKYAN, V. A; AROUTIOUNIAN, V. M; GAMBARYAN, K. M et al.Thin solid films. 2004, Vol 451-52, pp 124-127, issn 0040-6090, 4 p.Conference Paper

Electrical properties of p⁺/n⁺ InGaAsP tunnel diodes with a bandgap of 0.95 eV grown by liquid phase epitaxySHEN, C. C; CHANG, P. T.Applied physics. A, Solids and surfaces. 1994, Vol 59, Num 2, pp 199-201, issn 0721-7250Article

Growth of InP, InGaAs on InP by gas-source molecular beam epitaxyASONEN, H; RAKENNUS, K; TAPPURA, K et al.Journal of crystal growth. 1990, Vol 105, Num 1-4, pp 101-105, issn 0022-0248Conference Paper

Quantum well intermixing in InGaAsP laser structures using a low temperature grown InP cap layerGORDON, B. E; LEE, A. S. W; THOMPSON, D. A et al.Semiconductor science and technology. 2003, Vol 18, Num 8, pp 782-787, issn 0268-1242, 6 p.Article

Role of surface diffusion during selective area MOVPE growth of InPWAKI, Noriaki; NAKANO, Takayuki; SUGIYMA, Masakazu et al.Thin solid films. 2006, Vol 498, Num 1-2, pp 163-166, issn 0040-6090, 4 p.Conference Paper

Simulation and design of the emission wavelength of multiple quantum well structures fabricated by selective area metalorganic chemical vapor depositionSHIODA, Tomonari; DOI, Takeshi; AL AMIN, Abdullah et al.Thin solid films. 2006, Vol 498, Num 1-2, pp 174-178, issn 0040-6090, 5 p.Conference Paper

Feasibility of III-V on-silicon strain relaxed substratesKOSTRZEWA, M; GRENET, G; REGRENY, P et al.Journal of crystal growth. 2005, Vol 275, Num 1-2, pp 157-166, issn 0022-0248, 10 p.Conference Paper

Optimization of buffer layers for lattice-mismatched epitaxy of Ga_xIn_1-xAs/InAs_yP_1-y double-heterostructures on InPAHRENKIEL, S. P; WANLASS, M. W; CARAPELLA, J. J et al.Solar energy materials and solar cells. 2007, Vol 91, Num 10, pp 908-918, issn 0927-0248, 11 p.Article